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The zero-bias anomaly in the dependence of the tunneling density of states$\nu (\epsilon)$ on the energy $\epsilon$ of the tunneling particle for two-and one-dimensional multilayered structures is studied. We show that for aballistic two-dimensional (2D) system the first order interaction correction toDOS due to the plasmon excitations studied by Khveshchenko and Reizer is partlycompensated by the contribution of electron-hole pairs which is twice as smalland has the opposite sign. For multilayered systems the total correction to thedensity of states near the Fermi energy has the form $\delta \nu/\nu_0 = {max}(| \epsilon |, \epsilon^*)/4\epsilon_F$, where $\epsilon^*$ is the plasmonenergy gap of the multilayered 2D system. In the case of one-dimensionalconductors we study multiwall nanotubes with the elastic mean free pathexceeding the radius of the nanotube. The dependence of the tunneling densityof states energy, temperature and on the number of shells is found.Comment: 8 pages, 3 figure

Zero-bias anomaly in two-dimensional electron layers and multiwall nanotubes