English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Structure of the Ga-stabilized GaAs(001)-c(8x2) surface has been studiedusing rocking-curve analysis of reflection high-energy electron diffraction(RHEED). The c(8x2) structure emerges at temperatures higher than 600C, but isunstable with respect to the change to the (2x6)/(3x6) structure at lowertemperatures. Our RHEED rocking-curve analysis at high temperatures revealedthat the c(8x2) surface has the structure which is basically the same as thatrecently proposed by Kumpf et al. [Phys. Rev. Lett. 86, 3586 (2001)]. We foundthat the surface atomic configurations are locally fluctuated at hightemperatures without disturbing the c(8x2) periodicity.Comment: 14 pages, 4 figures, 1 tabl

physical review. b, condensed matter

Structure analysis of the Ga-stabilized<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">GaAs</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>001</mml:mn><mml:mo>)</mml:mo><mml:mo>−</mml:mo><mml:mi>c</mml:mi><mml:mo>(</mml:mo><mml:mn>8</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>2</mml:mn><mml:mo>)</mml:mo></mml:math>surface at high temperatures

Structure analysis of the Ga-stabilizedGaAs(001)−c(8×2)surface at high temperatures