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In high-mobility silicon MOSFET's, the $g^*m^*$ inferred indirectly frommagnetoconductance and magnetoresistance measurements with the assumption that$g^*\mu_BH_s=2E_F$ are in surprisingly good agreement with $g^*m^*$ obtained bydirect measurement of Shubnikov-de Haas oscillations. The enhancedsusceptibility $\chi^* \propto (g^*m^*)$ exhibits critical behavior of the form$\chi^* \propto (n - n_0)^{-\alpha}$. We examine the significance of the fieldscale $H_s$ derived from transport measurements, and show that this fieldsignals the onset of full spin polarization only in the absence of disorder.Our results suggest that disorder becomes increasingly important as theelectron density is reduced toward the transition.Comment: 4 pages, 3 figure

Spin polarization of strongly interacting two-dimensional electrons: The role of disorder