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First measurements of time-dependent second-harmonic generation ~SHG! at a Si/(ZrO2) x(SiO2) 12x inter- face show a behavior that is drastically different from similar measurements at Si/SiO 2 interfaces. We suggest that in Si/SiO2 only electron injection is important, while both electrons and holes contribute to the dynamics at the Si/(ZrO2) x(SiO2) 12x interface. Multiphoton excitation occurs in Si for all oxides, and involves direct interband transitions. The marked difference between the two systems is related to the population of multi- photon excited states in Si, the corresponding conduction- and valence-band offsets, and trapping/detrapping processes in the oxides. Our measurements confirm the existence of an initial built-in field at the interface.

Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation