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We report a direct and reliable way to produce the Si(100)-c(4×4) reconstruction by submonolayer deposition from a SiC source and subsequent annealing. Auger electron spectroscopy, low-energy electron diffraction, and scanning tunneling microscopy (STM) investigations reveal that a C amount equivalent to 0.07 monolayers (ML’s) is sufficient to obtain full coverage of the c(4×4) reconstruction. A deposition of 0.035 ML’s C produces a c(4×4) coverage of only 19%, indicating that C is not only present in the c(4×4) areas, but also in the 2×1 areas. There is not enough C to make it a regular part of the c(4×4) reconstruction and we therefore conclude that the c(4×4) reconstruction is strain induced. We find that a combination of the mixed ad-dimer and buckled ad-dimer models explains all main features observed in the STM images. Images of freshly prepared c(4×4) surfaces exhibit a decoration of approximately 50% of the unit cells, which is attributed to perpendicular ad-dimers. Long exposures (&gt;20 h) to the UHV background gas quench these features and the c(4×4) reconstruction appears as if more homogeneous

physical review. b, condensed matter

STM study of the C-induced<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Si</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>100</mml:mn><mml:mo>)</mml:mo><mml:mo>−</mml:mo><mml:mi>c</mml:mi><mml:mo>(</mml:mo><mml:mn>4</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>4</mml:mn><mml:mo>)</mml:mo></mml:math>reconstruction

STM study of the C-inducedSi(100)−c(4×4)reconstruction