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We theoretically investigate spin dependent transport in ferromagnetic/normalmetal/ferromagnetic single electron transistors by applying master equationcalculations using a two dimensional space of states involving spin and chargedegrees of freedom. When the magnetizations of ferromagnetic leads are inanti-parallel alignment, the spins accumulate in the island and a difference ofchemical potentials of the two spins is built up. This shift in chemicalpotential acts as charge offset in the island and alternates the gatedependence of spin current. Taking advantage of this effect, one can controlthe polarization of current up to the polarization of lead by tuning gatevoltages.Comment: 5 pages, 4 figure

Gate-controlled spin polarized current in ferromagnetic single electron transistors