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The electrical transport properties of amorphous Bi films prepared bysequential quench deposition have been studied in situ. Asuperconductor-insulator (S-I) transition was observed as the film was madeincreasingly thicker, consistent with previous studies. Unexpected behavior wasfound at the initial stage of film growth, a regime not explored in detailprior to the present work. As the temperature was lowered, a positivetemperature coefficient of resistance (dR/dT > 0) emerged, with the resistancereaching a minimum before the dR/dT became negative again. This behavior wasaccompanied by a non-linear and asymmetric I-V characteristic. As the filmbecame thicker, conventional variable-range hopping (VRH) was recovered. Weattribute the observed crossover in the electrical transport properties to anamorphous to granular structural transition. The positive dR/dT found in theamorphous phase of Bi formed at the initial stage of film growth wasqualitatively explained by the formation of metallic droplets within theelectron glass.Comment: 7 pages, 6 figure

physical review. b, condensed matter

Electrical transport studies of quench condensed Bi films at the initial stage of film growth: A structural transition and the possible formation of electron droplets