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Epitaxial growth of (La$_{1.48}$Nd$_{0.40}$Sr$_{0.12}$)CuO$_4$ thin films wasstudied by pulsed-laser deposition technique on three different substrates,SrTiO$_3$ (100), LaSrAlO$_4$ (001), and YAlO$_3$ (001). The(Nd,Sr,Ce)$_2$CuO$_4$-type structure appears at the initial growth stage onSrTiO$_3$ (100) when the film is deposited under the growth conditionsoptimized for (La,Sr)$_2$CuO$_4$. This (Nd,Sr,Ce)$_2$CuO$_4$-type structure canbe eliminated by increasing the substrate temperature and the laser repetitionfrequency. Films on LaSrAlO$_4$ (001) maintain a La$_2$CuO$_4$-type structureas bulk samples, but those on YAlO$_3$ (001) show phase separation intoLa$_2$CuO$_4$- and Nd$_2$CuO$_4$-type structures. Such complicated results areexplained in terms of the competition between lattice misfit and thermodynamicconditions. Interestingly the films with La$_2$CuO$_4$-type structure preparedon SrTiO$_3$ and LaSrAlO$_4$ show different surface structures and transportproperties. The results indicate the possibility of controlling charge stripesof (La$_{1.48}$Nd$_{0.40}$Sr$_{0.12}$)CuO$_4$ as was demonstrated in(La,Ba)$_2$CuO$_4$ thin films by Sato et al. (Phys. Rev. B {\bf 62}, R799(2000)).Comment: 5 pages, 6 EPS figure, accepted for publication in Phys. Rev.

physical review. b, condensed matter

Structural phase control of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>(</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">La</mml:mi></mml:mrow><mml:mrow><mml:mn>1.48</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Nd</mml:mi></mml:mrow><mml:mrow><mml:mn>0.40</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Sr</mml:mi></mml:mrow><mml:mrow…

Structural phase control of(La1.48Nd0.40Sr