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Recent experiments in silicon MOSFETs indicate that the Hall coefficient isindependent of magnetic field applied at a small angle with respect to theplane. Below a scattering between spin-up and spin-down carriers is consideredto be the main reason for the experimental observation. Comparison of two bandmodel with experiment provides an upper limit for the electron-electronscattering time $\tau_{ee}$ in the dilute 2D electron system as a function ofelectron density $n_s$. The time $\tau_{ee}$ increases gradually with $n_s$,becoming much greater than the transport scattering time $\tau_p$ for densities$n_s>4 \times 10 ^{11}$ cm$^{-2}$. Strong electron-electron scattering is foundfor $1.22 \times 10 ^{11} <n_s<3 \times 10 ^{11}$ cm$^{-2}$, the region whichis near to the apparent metal insulator transition.Comment: 5 pages, 4 figure

Hall coefficient and electron-electron interaction of two-dimensional electrons in Si MOSFETs