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Utilizing ultrathin Ru interfacial layers in ${\mathrm{C}\mathrm{o}/\mathrm{A}\mathrm{l}}_{2}{\mathrm{O}}_{3}/\mathrm{Co}$ tunnel junctions, we demonstrate that not only does the tunnel magnetoresistance decrease strongly as the Ru thickness increases as found for Cu or Cr interlayers, in contrast, even the sign of the apparent tunneling spin polarization may be changed. Further, the magnitude and sign of the apparent polarization is strongly dependent on applied voltage. The results are explained by a strong density-of-states modification at the (interdiffused) Co/Ru interface, consistent with theoretical calculations and experiments on Co/Ru metallic multilayers and Co-Ru alloys.

physical review. b, condensed matter

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Sign reversal of spin polarization inCo/Ru/Al2