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We have investigated the intermediate valence narrow-gap semiconductor SmB6at low temperatures using both conventional spear-anvil type point contacts aswell as mechanically controllable break junctions. The zero-bias conductancevaried between less than 0.01 mikrosiemens and up to 1 mS. The position of thespectral anomalies, which are related to the different activation energies andband gaps of SmB6, did not depend on the the contact size. Two differentregimes of charge transport could be distinguished: Contacts with large zero -bias conductance are in the diffusive Maxwell regime. They had spectra withonly small non-linearities. Contacts with small zero - bias conductance are inthe tunnelling regime. They had larger anomalies, but still indicating a finite45 % residual quasiparticle density of states at the Fermi level at lowtemperatures of T = 0.1 K. The density of states derived from the tunellingspectra can be decomposed into two energy-dependent parts with Eg = 21 meV andEd = 4.5 meV wide gaps, respectively.Comment: 9 pages incl. 13 figure

physical review. b, condensed matter

Energy gap of intermediate-valent<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SmB</mml:mi></mml:mrow><mml:mrow><mml:mn>6</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>studied by point-contact spectroscopy

Energy gap of intermediate-valentSmB6studied by point-contact spectroscopy