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We studied low temperature (T=50mK) in-plane magnetoresistance of a dilutetwo-dimensional hole system in GaAs/AlGaAs heterostructure that exhibits anapparent metal-insulator transition. We found an anisotropic magnetoresistance,which changes dramatically at high in-plane fields ($B_{\parallel}\agt$5T) asthe hole density is varied. At high densities where the system behaves metallicat $B_{\parallel}=0$, the transverse magnetoresistance is larger than thelongitudinal magnetoresistance. With decreasing the hole density the differencebecomes progressively smaller, and at densities near the "critical" density andlower, the longitudinal magnetoresistance becomes larger than the transversemagnetoresistance

physical review. b, condensed matter

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Nonmonotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes inGaAs/Al