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Recent experiments in the two dimensional electron systems in silicon MOSFETshave shown that the in-plane magnetic field $H_{sat}$ required to saturate theconductivity to its high-field value and the magnetic field $H_s$ needed tocompletely align the spins of the electrons are comparable. By small-angleShubnikov-de Haas oscillation measurements that allow separate determinationsof the spin-up and spin-down subband populations, we show that $H_{sat}=H_s$ toan accuracy of 5% for electron densities $n_s > 3 \times 10^{11}$ cm$^{-2}$.Comment: 4 pages, 3 figures; minor changes, references updated and adde

Spin polarization of two-dimensional electrons determined from Shubnikov–de Haas oscillations as a function of angle