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We calculate the electron-electron interaction induced energy-dependentinelastic carrier relaxation rate in doped semiconductor coupled double quantumwell nanostructures within the two subband approximation at zero temperature.In particular, we calculate, using many-body theory, the imaginary part of thefull self-energy matrix by expanding in the dynamically RPA screened Coulombinteraction, obtaining the intrasubband and intersubband electron relaxationrates in the ground and excited subbands as a function of electron energy. Weseparate out the single particle and the collective excitation contributions,and comment on the effects of structural asymmetry in the quantum well on therelaxation rate. Effects of dynamical screening and Fermi statistics areautomatically included in our many body formalism rather than beingincorporated in an ad-hoc manner as one must do in the Boltzman theory.Comment: 26 pages, 5 figure

Carrier relaxation due to electron-electron interaction in coupled double quantum well structures