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The sign change in the Hall conductivity has been studied in thin amorphousNb$_{1-x}$Ge$_x (x\approx$0.3) films. By changing the film thickness it isshown that the field at which the sign reversal occurs shifts to lower values(from above to below the mean-field transition field $H_{c2}$) with increasingfilm thickness. This effect can be understood in terms of a competition betweena positive normal and a negative fluctuation contribution to the Hallconductivity.Comment: 5 pages, 4 figures, to appear in Phys. Rev.

physical review. b, condensed matter

Hall-conductivity sign change and fluctuations in amorphous<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Nb</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>films

Hall-conductivity sign change and fluctuations in amorphousNbxGe1−xfilms