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The electron dephasing time $\tau_{\phi}$ in a diffusive quantum dot iscalculated by considering the interaction between the electron and dynamicaldefects, modelled as two-level system. Using the standard tunneling model ofglasses, we obtain a linear temperature dependence of $1/\tau_{\phi}$,consistent with the experimental observation. However, we find that, in orderto obtain dephasing times on the order of nanoseconds, the number of two-leveldefects needs to be substantially larger than the typical concentration inglasses. We also find a finite system-size dependence of $\tau_{\phi}$, whichcan be used to probe the effectiveness of surface-aggregated defects.Comment: two-column 9 page

Dephasing of electrons by two-level defects in quantum dots