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We report measurements of the resistance of silicon MOSFETs as a function oftemperature in high parallel magnetic fields where the 2D system of electronshas been shown to be fully spin-polarized. A magnetic field suppresses themetallic behavior observed in the absence of a magnetic field. In a field of10.8 T, insulating behavior is found for densities up to n_s approximately 1.35x 10^{11} cm^{-2} or 1.5 n_c; above this density the resistance is a very weakfunction of temperature, varying less than 10% between 0.25 K and 1.90 K. Atlow densities the resistance goes to infinity more rapidly as the temperatureis reduced than in zero field and the magnetoresistance diverges as T goes to0.Comment: 4 pages, including 4 figures. References adde

Temperature dependence of the resistivity of a dilute two-dimensional electron system in high parallel magnetic field