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We have determined the localization length \xi and the impurity dielectricsusceptibility \chi_{\rm imp} as a function of Ga acceptor concentrations (N)in nominally uncompensated ^{70}Ge:Ga just below the critical concentration(N_c) for the metal-insulator transition. Both \xi and \chi_{\rm imp} divergeat N_c according to the functions \xi\propto(1-N/N_c)^{-\nu} and \chi_{\rmimp}\propto(N_c/N-1)^{-\zeta}, respectively, with \nu=1.2\pm0.3 and\zeta=2.3\pm0.6 for 0.99N_c< N< N_c. Outside of this region (N<0.99N_c), thevalues of the exponents drop to \nu=0.33\pm0.03 and \zeta=0.62\pm0.05. Theeffect of the small amount of compensating dopants that are present in ournominally uncompensated samples, may be responsible for the change of thecritical exponents at N\approx0.99N_c.Comment: RevTeX, 4 pages with 5 embedded figures, final version (minor changes

physical review. b, condensed matter

Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously dopedp-typeGe