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The high-frequency conductivity of Si delta-doped GaAs/AlGaAsheterostructures is studied in the integer quantum Hall effect (QHE) regime,using acoustic methods. Both the real and the imaginary parts of the complexconductivity are determined from the experimentally observed magnetic field andtemperature dependences of the velocity and the attenuation of a surfaceacoustic wave. It is demonstrated that in the structures studied the mechanismof low-temperature conductance near the QHE plateau centers is hopping. It isalso shown that at magnetic fields corresponding to filling factors 2 and 4,the doped Si delta- layer efficiently shunts the conductance in thetwo-dimensional electron gas (2DEG) channel. A method to separate the twocontributions to the real part of the conductivity is developed, and thelocalization length in the 2DEG channel is estimated.Comment: 8pages, 9 figure

High-frequency hopping conductivity in the quantum Hall effect regime: Acoustical studies