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The cleaved and (2 x 1) reconstructed (111) surface of p-type Si isinvestigated by scanning tunneling microscopy (STM). Single B acceptors areidentified due to their characteristic voltage-dependent contrast which isexplained by a local energetic shift of the electronic density of states causedby the Coulomb potential of the negatively charged acceptor. In addition,detailed analysis of the STM images shows that apparently one orbital ismissing at the B site at sample voltages of 0.4 - 0.6 V, corresponding to theabsence of a localized dangling-bond state. Scanning tunneling spectroscopyconfirms a strongly altered density of states at the B atom due to thedifferent electronic structure of B compared to Si.Comment: 6 pages, 7 figure

Investigation of single boron acceptors at the cleaved Si:B(111) surface