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Using empirical potential molecular dynamics we compute dynamical matrixeigenvalues and eigenvectors for a 4096 atom model of amorphous silicon and aset of models with voids of different size based on it. This information isthen employed to study the localization properties of the low-energyvibrational states, calculate the specific heat C(T) and examine thelow-temperature properties of our models usually attributed to the presence oftunneling states in amorphous silicon. The results of our calculations for C(T)and "excess specific heat bulge" in the C(T)/T^3 vs. T graph for voidless a-Siappear to be in good agreement with experiment; moreover our investigationshows that the presence of localized low-energy excitations in the vibrationalspectrum of our models with voids strongly manifests itself as a sharp peak inC(T)/T^3 dependence at T < 3K. To our knowledge this is the first numericalsimulation that provides adequate agreement with experiment for the verylow-temperature properties of specific heat in disordered systems within thelimits of harmonic approximation.Comment: 5 pages with 2 ps figures, submitted to PR

physical review. b, condensed matter

Low-temperature anomalous specific heat without tunneling modes: A simulation for<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">Si</mml:mi></mml:math>with voids

Low-temperature anomalous specific heat without tunneling modes: A simulation fora−Siwith voids