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segregation energies are similar and an order of magnitude larger than in the arsenides or Si/Ge systems. The largest segregation energy of about 3.6 eV is found for the AlN/InN surface. In contrast, segregation effects for the N-adatom 232 reconstruction on the ~0001! surfaces are strongly suppressed. At AlN/GaN and GaN/InN interfaces the segregation effects are very weak and should not affect their morphology. Our results suggest the choice of optimal conditions of growth that lead to sharp interfaces and longer lifetimes of carriers in III-nitride heterosystems.

Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems