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We have for the first time experimentally investigated the weak localisationmagnetoresistance in a AlGaAs/GaAs p-type quantum well. The peculiarity of suchsystems is that spin-orbit interaction is strong. On the theoretical side it isnot possible to treat the spin-orbit interaction as a perturbation. This is incontrast to all prior investigations of weak localisation. In this letter wecompare the experimental results with a newly developed diffusion theory, whichexplicitly describes the weak localisation regime when the spin-orbit couplingis strong. The spin relaxation rates calculated from the fitting parameters wasfound to agree with theoretical expectations. Furthermore the fittingparameters indicate an enhanced phase breaking rate compared to theoreticalpredictions.Comment: 4 Pages, 5 figures, accepted for publication in PR

physical review. b, condensed matter

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Weak localization inAl0.5Ga0.5As/