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We have performed voltage dependent imaging and spatially resolvedspectroscopy on the (110) surface of Te doped GaAs single crystals with a lowtemperature scanning tunneling microscope (STM). A large fraction of theobserved defects are identified as Te dopant atoms which can be observed downto the fifth subsurface layer. For negative sample voltages, the dopant atomsare surrounded by Friedel charge density oscillations. Spatially resolvedspectroscopy above the dopant atoms and above defect free areas of the GaAs(110) surface reveals the presence of conductance peaks inside thesemiconductor band gap. The appearance of the peaks can be linked to chargesresiding on states which are localized within the tunnel junction area. We showthat these localized states can be present on the doped GaAs surface as well asat the STM tip apex.Comment: 8 pages, 8 figures, accepted for publication in PR

Scanning tunneling microscopy and spectroscopy at low temperatures of the (110) surface of Te-doped GaAs single crystals