English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

A theoretical analysis of vertical-transport phenomena in semiconductor heterostructures is presented. In particular, the scattering coupling between two- and three-dimensional states in multiple quantum wells is investigated. To this purpose, a fully three-dimensional approach for the description of both localized and extended states in the heterostructure is proposed. Starting from such three-dimensional states, obtained from a self-consistent Schrödinger-Poisson calculation, a Monte Carlo solution of the corresponding Boltzmann transport equation is performed. In contrast to various phenomenological transport models, the present simulation scheme allows a kinetic description, i.e., based on microscopic scattering rates, of vertical transport across a generic heterostructure. Our results provide a rigorous description of hot-carrier relaxation between extended and localized states. This simulation scheme has been applied to finite multiple quantum wells with different geometries and doping profiles. A detailed analysis of the electron current as a function of temperature in quasiequilibrium conditions shows good agreement with experimental results. Moreover, in non-equilibrium conditions (i.e., hot-carrier regime) the scattering coupling between three- and two-dimensional states is found to play a significant role in modifying the carrier mobility as well as the fraction of conducting electrons

physical review. b, condensed matter

Microscopic theory of vertical-transport phenomena in semiconductor heterostructures: Interplay between two- and three-dimensional hot-carrier relaxation