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The resistance R of a high density network of 6 nm diameter Bi wires inporous Vycor glass is studied in order to observe its expected semiconductorbehavior. R increases from 300 K down to 0.3 K. Below 4 K, where R variesapproximately as ln(1/T), the order-of-magnitude of the resistance rise, aswell as the behavior of the magnetoresistance are consistent with localizationand electron-electron interaction theories of a one-dimensional disorderedconductor in the presence of strong spin-orbit scattering. We show that thisbehaviour and the surface-enhanced carrier density may mask the proposedsemimetal-to-semiconductor transition for quantum Bi wires.Comment: 19 pages total, 4 figures; accepted for publication in Phys. Rev.

Electronic transport in a three-dimensional network of one-dimensional bismuth quantum wires