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Efficient anti-Stokes photoluminescence (PL) has been observed in ${\mathrm{Ga}}_{0.5}{\mathrm{In}}_{0.5}\mathrm{P}$ and GaAs single heterostructure. PL of ${\mathrm{Ga}}_{0.5}{\mathrm{In}}_{0.5}\mathrm{P}$ was observed when photoexciting the ${\mathrm{Ga}}_{0.5}{\mathrm{In}}_{0.5}\mathrm{P}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}$ interface. The anti-Stokes PL intensity from the ${\mathrm{Ga}}_{0.5}{\mathrm{In}}_{0.5}\mathrm{P}$ layer is about 1% of the GaAs PL. The observed anti-Stokes PL exhibits a characteristic intensity dependence in the double-logarithmic plot, which reveals two straight lines having slopes of about 2 and 4. Time-resolved measurements show that the anti-Stokes PL is described by two components: the rapid decay caused by the two-step two-photon absorption of the excitation laser light and the slower decay by energy transfer of electron-hole recombination energy in the GaAs. We found that many-particle effects in the GaAs under high excitations cause the characteristic intensity dependence of the anti-Stokes PL.

physical review. b, condensed matter

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Dynamic process of anti-Stokes photoluminescence at a long-range-orderedGa0.5In0.5P/