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Semiconductor $p^+ - p^- - n - p^+ - n^{++}$ structures with large junctionand contact areas are treated as 1 \times 2-dimensional active media, in whichself-organized pattern formation can be expected. The local bistable behaviorof the structures may emanate from two different mechanisms both governed by anonlinear current feedback-loop between the electrons and holes injected fromthe outer layers. By considering the device to be composed of an activesubsystem with negative differential resistance and a passive resistive layerwith positive differential resistance an analytical approach is suggested tounderstand and describe the corresponding physical mechanisms in aself-consistent way. Analytical solutions of the derived model equations allowa description of homogeneous stationary states and yield explicit expressionsof the current-density vs. voltage characteristics of the whole structure andits subsystems. A stability analysis of the homogeneous states with respect totwo-dimensional transversal harmonic fluctuations is performed for the twocases under study. The resulting dispersion relations allow two different typesof instability. While the first one is of Ridley's type which is characteristicfor any spatially extended electrical system with negative differentialresistance, the second type can be considered as a solid-state analogue ofTuring's instability known as a generic instability mechanism which may lead,e. g., to the formation of periodic patterns.Comment: Submitted to Phys. Rev. B, 6 fig

physical review. b, condensed matter

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Mechanisms of spatial current-density instabilities inp+−p−−n−p