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We wish to report in this paper a study of the effective mass (m^*) inthin-oxide Si-metal-oxide-semiconductor field-effect-transistors, using thetemperature dependence of the Shubnikov-de Haas (SdH) effect and following themethodology developed by J.L. Smith and P.J. Stiles, Phys. Rev. Lett. {\bf 29},102 (1972). We find that in the thin oxide limit, when the oxide thickness$d_{ox}$ is smaller than the average two-dimensional electron-electronseparation r, m^* is still enhanced and the enhancement can be described by$m^*/m_B = 0.815 + 0.23(r/d_{ox})$, where $m_B = 0.195 m_e$ is the bulkelectron mass, $m_e$ the free electron mass. At $n_s = 6 \times 10^{11}/cm^2$,for example, $m^* \simeq 0.25 m_e$, an enhancement doubles that previouslyreported by Smith and Stiles. Our result shows that the interaction betweenelectrons in the semiconductor and the neutralizing positive charges on themetallic gate electrode is important for mass enhancement. We also studied themagnetic-field orientation dependence of the SdH effect and deduced a value of$3.0 \pm 0.5$ for the effective $g$ factor in our thin oxide samples.Comment: To appear in Phys. Rev. B (SCHED. DATE Apr. 15, 1999

Mass enhancement of two-dimensional electrons in thin-oxide Si-MOSFET’s