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We report the low temperature carrier transport properties of a series ofnominally uncompensated neutron-transmutation doped (NTD) ^{70} Ge:Ga samplesvery close to the critical concentration N_c for the metal-insulatortransition. The concentration of the sample closest to N_c is 1.0004N_c and itis unambiguously shown that the critical conductivity exponent is 0.5.Properties of insulating samples are discussed in the context of Efros andShklovskii's variable range hopping conduction.Comment: 8 pages using REVTeX, 8 figures, published versio

physical review. b, condensed matter

Electrical properties of isotopically enriched neutron-transmutation-doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow /><mml:mrow><mml:mn>70</mml:mn></mml:mrow></mml:msup></mml:mrow><mml:mi mathvariant="normal">G</mml:mi><mml:mi mathvariant="normal">e</mml:mi><mml:mo>:</mml:mo><mml:mi mathvariant="normal">G</mml:mi><mml:mi mathvariant="normal">a</mml:mi></mml:math>near the metal-insulator transition

Electrical properties of isotopically enriched neutron-transmutation-doped70Ge:Ganear the metal-insulator transition