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We have performed an approximate ab initio calculation of vibrationalproperties of hydrogenated amorphous silicon (a-Si:H) using a moleculardynamics method. A 216 atom model for pure amorphous silicon (a-Si) has beenemployed as a starting point for our a-Si:H models with voids that were made byremoving a cluster of silicon atoms out of the bulk and terminating theresulting dangling bonds with hydrogens.  Our calculation shows that the presence of voids leads to localized lowenergy (30-50 cm^{-1}) states in the vibrational spectrum of the system. Thenature and localization properties of these states are analyzed by variousvisualization techniques.Comment: 15 pages with 6 PS figures, to appear in PRB in December 199

Approximateab initiocalculation of vibrational properties of hydrogenated amorphous silicon with inner voids