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We present a study of the effects of Nitrogen and Boron doping on the growthof CVD diamond in the (100) mechanism. These are the first calculations of thistype and show that, in accordance with recent experimental results, thepresently accepted growth mechanism, that due to Harris, is cataylsed by thepresence of subsurface Boron impurities. In contrast, we find that the HarrisMechanism cannot explain growth in the presence of subsurface N and suggest analternative mechanism.Comment: 6 pages, 5 figures, 1 tabl

physical review. b, condensed matter

Effect of N and B doping on the growth of CVD diamond<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn /><mml:mo>(</mml:mo><mml:mn>100</mml:mn><mml:mo>)</mml:mo><mml:mo>:</mml:mo><mml:mi mathvariant="normal">H</mml:mi><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo>)</mml:mo></mml:math>surfaces

Effect of N and B doping on the growth of CVD diamond(100):H(2×1)surfaces