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The semiconductor-metal electronic transition of the K/Si(100)-(2×1) interface is studied by exploring the Fermi surface with photoemission spectroscopy. Once metallized at a critical coverage the surface remains metallic up to saturation. The experimentally determined Fermi surface consists of hole pockets centered around the Γ + ̄ points of the surface Brillouin zone. These results are fairly well reproduced by calculations based on a 2D Mott-Hubbard model. The metallization process is related to the overlap of Si-confined electron clouds surrounding the K atoms rather than to changes in the surface atomic structure. © 1998 The American Physical SocietyThis work was partially funded by the Spanish agency DGCYT under Grant No. PB94-0022-c02-01 and PB92- 0030 .Peer Reviewe

physical review. b, condensed matter

Semiconductor-metal transition of the single-domain<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">K</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>100</mml:mn><mml:mo>)</mml:mo><mml:mo>−</mml:mo><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo>)</mml:mo></mml:math>interface by Fermi-surface determination

Semiconductor-metal transition of the single-domainK/Si(100)−(2×1)interface by Fermi-surface determination