English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The electronic structure of pyramidal shaped InAs/GaAs quantum dots iscalculated using an eight-band strain dependent $\bf k\cdot p$ Hamiltonian. Theinfluence of strain on band energies and the conduction-band effective mass areexamined. Single particle bound-state energies and exciton binding energies arecomputed as functions of island size. The eight-band results are compared withthose for one, four and six bands, and with results from a one-bandapproximation in which m(r) is determined by the local value of the strain. Theeight-band model predicts a lower ground state energy and a larger number ofexcited states than the other approximations.Comment: 8 pages, 7 figures, revtex, eps

Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations