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We present a detailed study of the effect of local chemical ordering on thestructural, electronic, and dynamical properties of amorphous gallium arsenide.Using the recently-proposed ``activation-relaxation technique'' and empiricalpotentials, we have constructed two 216-atom tetrahedral continuous randomnetworks with different topological properties, which were further relaxedusing tight-binding molecular dynamics. The first network corresponds to thetraditional, amorphous, Polk-type, network, randomly decorated with Ga and Asatoms. The second is an amorphous structure with a minimum of wrong (homopolar)bonds, and therefore a minimum of odd-membered atomic rings, and thuscorresponds to the Connell-Temkin model. By comparing the structural,electronic, and dynamical properties of these two models, we show that theConnell-Temkin network is energetically favored over Polk, but that mostproperties are little affected by the differences in topology. We conclude thatmost indirect experimental evidence for the presence (or absence) of wrongbonds is much weaker than previously believed and that only direct structuralmeasurements, i.e., of such quantities as partial radial distributionfunctions, can provide quantitative information on these defects in a-GaAs.Comment: 10 pages, 7 ps figures with eps

Structural, electronic, and dynamical properties of amorphous gallium arsenide: A comparison between two topological models