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The anisotropic magnetoresistance (AMR) has been measured for Ni${}_{80}$Fe${}_{20}$ thin films, with the magnetization vector rotating in the film plane as well as out of the film plane. The out-of-plane (OP) AMR is found to be considerably larger than the in-plane (IP) effect, and strongly dependent on the degree of texture. In untextured films, the difference between the IP- and the OP-AMR is explained in terms of a dimensionality effect, whereas in (111)-textured films an additional contribution to the OP-AMR is found.

physical review. b, condensed matter

In-plane and out-of-plane anisotropic magnetoresistance in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ni</mml:mi></mml:mrow><mml:mrow><mml:mn>80</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Fe</mml:mi></mml:mrow><mml:mrow><mml:mn>20</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>thin films

In-plane and out-of-plane anisotropic magnetoresistance inNi80Fe20thin films