English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Reflectance anisotropy spectroscopy (RAS) has been employed in situ to investigate the overlayer growth of GaAs onto submonolayer to one monolayer coverages of Si δ layers deposited on the GaAs(001)-c(4×4) surface. The intensity of RAS features, thought to arise from the linear electro-optic (LEO) effect, is found to vary with both the number of atoms in the Si δ layer and the position of the δ plane from the GaAs surface. Self-consistent solutions to Poisson’s equation are made to calculate the electric field in the near-surface region of the samples. The results show a direct correlation between the LEO intensity and the surface field averaged over the penetration depth of the incident radiation, in confirmation of the LEO model.

Reflectance anisotropy spectra from Si δ-doped GaAs(001): Correlation of linear electro-optic effect with integrated surface field