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We have investigated the quantum admittance of an ultrasmall tunnel junctionwith arbitrary tunneling strength under an electromagnetic environment. Usingthe functional integral approach a close analytical expression of the quantumadmittance is derived for a general electromagnetic environment. We thenconsider a specific controllable environment where a resistance is connected inseries with the tunneling junction, for which we derived the dc quantumconductance from the zero frequency limit of the imaginary part of the quantumadmittance. For such electromagnetic environment the dc conductance has beeninvestigated in recent experiments, and our numerical results agreequantitatively very well with the measurements. Our complete numerical resultsfor the entire range of junction conductance and electromagnetic environmentalconductance confirmed the few existing theoretical conclusions.Comment: 7 pages, 3 ps-figure

Charging ultrasmall tunnel junctions in an electromagnetic environment