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Differential conductance of the resonant-tunneling structure with a single impurity level studied in the current plateau regime undergoes fluctuations around a zero average manifesting the energy dependence of the local density of states in a disordered electrode. Although the rms value of dI/dV depends on disorder and barrier transparencies, it is almost independent of temperature and, as a function of bias voltage, has a correlation function scaled by the intrinsic width of the resonance, which can be regarded as a tool to measure this quantity beyond the main differential-conductance peak. The analysis is extended to the regime of classically high magnetic fields where both the amplitude and correlation magnetic field are expected to increase

Image of local density of states fluctuations in disordered metals in the differential conductance of tunneling via a resonant impurity level