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We calculate the electronic structure of nm scale InP islands embedded in$Ga_{0.51}In_{0.49}P$. The calculations are done in the envelope approximationand include the effects of strain, piezoelectric polarization, and mixing among6 valence bands. The electrons are confined within the entire island, while theholes are confined to strain induced pockets. One pocket forms a ring at thebottom of the island near the substrate interface, while the other is above theisland in the GaInP. The two sets of hole states are decoupled. Polarizationdependent dipole matrix elements are calculated for both types of hole states.Comment: Typographical error corrected in strain Hamiltonia

physical review. b, condensed matter

Electronic structure of strained<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">I</mml:mi><mml:mi mathvariant="normal">n</mml:mi><mml:mi mathvariant="normal">P</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">G</mml:mi><mml:mi mathvariant="normal">a</mml:mi></mml:mrow><mml:mrow><mml:mn>0.51</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml…

Electronic structure of strainedInP/Ga0.51In