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The structural and electronic properties in common anion (GaSb)_1/(InSb)_1and common cation (InAs)_1/(InSb)_1 [111] ordered superlattices have beendetermined using the local density total energy full potential linearizedaugmented plane wave method. The influence of the ordering direction, strainconditions and atomic substitution on the electronic properties oftechnological and experimental interest (such as energy band-gaps and chargecarrier localization in the different sublattices) were determined. The resultsshow an appreciable energy band-gap narrowing compared to the band-gap averagedover the constituent binaries, either in [001] ordered structures or (moremarkedly) in the [111] systems; moreover energy band-gaps show an increasingtrend as the substrate lattice parameter is decreased. Finally, the systemsexamined offer interesting opportunities for band-gap tuning as a function ofthe growth condition (about 0.7 eV in (GaSb)_1/(InSb)_1 and 0.3 eV in(InAs)_1/(InSb)_1).Comment: 25 pages, Latex-fil

Effects of epitaxial strain and ordering direction on the electronic properties of GaSb/InSb and InAs/InSb superlattices