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A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructuresis presented. The nonlinear dependence of the capacitance on the gate voltageand in-plane magnetic field is discussed together with the capacitance quantumsteps connected with a population of higher 2D gas subbands. The results offull self-consistent numerical calculations are compared to recent experimentaldata.Comment: 4 pages, Revtex. 4 PostScript figures in an uuencoded compressed file  available upon request. Phys. Rev.B, in pres

physical review. b, condensed matter

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Capacitance of gated GaAs/AlxGa1−<…