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We report on the results of molecular dynamics simulation (MD) studies of theclassical two-dimensional electron crystal in the presence disorder. Our studyis motivated by recent experiments on this system in modulation dopedsemiconductor systems in very strong magnetic fields, where the magnetic lengthis much smaller than the average interelectron spacing $a_0$, as well as byrecent studies of electrons on the surface of helium. We investigate the lowtemperature state of this system using a simulated annealing method. We findthat the low temperature state of the system always has isolated dislocations,even at the weakest disorder levels investigated. We also find evidence for atransition from a hexatic glass to an isotropic glass as the disorder isincreased. The former is characterized by quasi-long range orientational order,and the absence of disclination defects in the low temperature state, and thelatter by short range orientational order and the presence of these defects.The threshold electric field is also studied as a function of the disorderstrength, and is shown to have a characteristic signature of the transition.Finally, the qualitative behavior of the electron flow in the depinned state isshown to change continuously from an elastic flow to a channel-like, plasticflow as the disorder strength is increased.Comment: 31 pages, RevTex 3.0, 15 figures upon request, accepted for  publication in Phys. Rev. B., HAF94MD

Topological defects, orientational order, and depinning of the electron solid in a random potential