English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We show that, for some semiconductor devices and physical experiments,processes which scatter electrons {\em into} a state $|{\bf k}\rangle$ cancontribute strongly to the decay of a nonequilibrium electron occupation of$|{\bf k}\rangle$. For electrons, the decay rate $\gamma({\bf k})$ is given bythe sum of the total scattering-out {\em and scattering-in} rates of state$|{\bf k}\rangle$. The scattering-in term, which is often neglected incalculations, increases $\gamma({\bf k})$ of low energy electrons injected intosemidegenerate systems, which includes many doped semiconductor structures atnonzero temperatures, particularly those of reduced dimensions.Comment: 4 pages, figure available on request, RevTex 2.0. (NIST-BAS-93-01

Correction to the decay rate of nonequilibrium carrier distributions due to scattering-in processes