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We present an extensive study of the structure and energetics of monovacancies and antisites in InP. Using a first-principles approach, the different charge states of indium and phosphorus vacancies and antisites are examined. The lattice distortions around the defects are derived fully self-consistently with respect to both electronic and ionic degrees of freedom. Jahn-Teller relaxations, defect-induced one-electron energy levels, and ionization potentials in the band gap are discussed. From the formation energies we predict the favored vacancies and antisites under different stoichiometry conditions.Peer reviewe

Indium and phosphorus vacancies and antisites in InP