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We study variable range hopping in the quantum Hall effect regime in thepresence of a metallic gate parallel to the plane of a two-dimensional electrongas. Screening of the Coulomb interaction by the gate causes the partial``filling'' of the Coulomb gap in the density of localized states. At lowenough temperatures this leads to a substantial enhancement and a newtemperature behavior of the hopping conductivity. As a result, the diagonalconductivity peaks become much wider. The power law dependence of the width ofthe peaks on the temperature changes: the corresponding exponent turns out tobe twice as small as that for gateless structures. The width dependences on thecurrent in non-ohmic regime and on the frequency for the absorption of theelectromagnetic waves experience a similar modification. The experimentalobservation of the crossovers predicted may demonstrate the important role ofthe Coulomb interaction in the integer quantum Hall regime.Comment: 14 pages + 3 figures by request preprint TPI-MINN-93/58-

Effect of screening of the Coulomb interaction on the conductivity in the quantum Hall regime