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The Aharonov-Bohm (AB) interference patterns in ring-shaped conductors areusually dominated by random features. The amplitude of the oscillations israndom from sample to sample and from point to point on the magnetic field axisowing to random scattering of the electron trajectories by impurities withinthe wires. We report experiments on new devices made with wet etching andglobal gates, which have shown major progress towards removing the randomfeatures. In loops that exhibit ballistic conductance plateaux and cyclotronorbit trapping at $4.2K$, the random pattern of AB oscillations (observed for$T < 0.1K$) can be replaced by much more ordered one -- especially if only afew transverse modes are populated in the ring. The amplitude and shape of theoscillation envelope function change systematically as subbands are populatedin the wires forming the loops. Mechanisms governing the AB effect in theballistic regime are discussed. Correlation has been found between the$G(V_{g},B=0)$ staircase and the ``beating period" of the envelope functions.Quantum oscillations in $G(V_{g},B = 0)$ are consistent with directinterference of paths of unequal length. Both the correlations and the quantumoscillations in gate voltage are signatures of ballistic transport.Comment: 23 pages. 9 postscripts figures that will be emailed on reques

physical review. b, condensed matter

Correlations between Aharonov-Bohm effects and one-dimensional subband populations in GaAs/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:…

Correlations between Aharonov-Bohm effects and one-dimensional subband populations in GaAs/AlxGa