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The surface-state bands of the (1[times]1) and (1[times]2) phases of Bi/GaSb(110) have been probed using angle-resolved ultraviolet photoemission spectroscopy with synchrotron radiation. Four Bi-induced surface-state bands have been identified for both the (1[times]1) and the (1[times]2) phases. The bands with the lowest binding energies ([ital S][sup I] and [ital S][sup II]) have been attributed to intrachain bonding in the Bi overlayer and the higher-binding-energy bands ([ital S][sup III] and [ital S][sup IV]) to overlayer states involved in the back bonding of the overlayer to the substrate. Based on initial-state dispersion measurements, we conclude that the Bi chains in the epitaxial overlayer remain intact throughout the phase transition. We propose a model for the overlayer structure of the (1[times]2) phase of Bi/GaSb(110).

Electronic band structure of the two-dimensional surface-state bands of the (1×1) and (1×2) phases of Bi/GaSb(110)