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Recent observation of efficient light emission from porous silicon has attracted much attention and renewed interests in the study of nonlinear optical properties of nanometer-sized quantum systems. In this paper, we study the third-order nonlinear optical susceptibility of semiconductor quantum wires. The quantum wires are taken to be circular columns with a cross section size of ∼1 nm. The excitonic effects are taken to be the major electronic excitations. We find that the quantum confinement of the excitons greatly enhances the third-order optical nonlinear susceptibility in a quantum wire. The source of the enhancement is primarily the confinement-induced localization of excitons

Enhancement of the third-order nonlinear optical susceptibility in Si quantum wires