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The electronic structure of the InAs(110) cleavage surface has been studied by angle-resolved photoelectron spectroscopy. The bulk band structure has been calculated utilizing the augmented plane-wave method and then the bulk bands have been projected along the lines Γ¯-X¯ and Γ¯-Y¯ of the surface Brillouin zone (SBZ). Three surface-related structures have been found and their initial state versus k? dispersion along the line Γ¯-X¯ and the line Γ¯-Y¯ of the SBZ has been determined. The structures are identified as A5, A4, and A3 along Γ¯-X¯ and as A5, A4, and C2 along Γ¯-Y¯

Surface electronic structure of InAs(110)